Method for producing an integrated imaging device with front face illumination comprising at least one metal optical filter, and corresponding device

ABSTRACT

An integrated imaging device supports front face illumination with one or more photosensitive regions formed in a substrate. A lower dielectric region is provided over the substrate, the lower dielectric region having an upper face. A metal optical filter having a metal pattern is provided on the upper face (or extending into the lower dielectric region from the upper face). An upper dielectric region is provided on top of the lower dielectric region and metal optical filter. The lower dielectric region is at least part of a pre-metal dielectric layer, and the upper dielectric region is at least part of a metallization layer.

PRIORITY CLAIM

This application claims priority from French Application for Patent No.1362088 filed Dec. 4, 2013, the disclosure of which is incorporated byreference.

TECHNICAL FIELD

Embodiments of the invention relate to integrated imaging devices withfront face illumination, and in particular, integrated imaging devicescomprising metal optical filters designed to filter, in other words toallow through, various types of light radiation within a desiredwavelength range, in particular in the visible, UV or infrared range.

BACKGROUND

Imaging devices with front face illumination generally comprise a set ofpixels each having a photosensitive semiconductor region disposed underan integrated optical filter. Groups of pixels with red, green and bluefilters may notably be used, in such a manner as to form Bayer patternswell known to those skilled in the art.

Optical filters designed to only let through a single color generallycomprise an organic filter colored by pigments allowing infrared topass. It is generally advisable to combine them with an additionalinfrared filter for imaging applications in the visible range.

Colored filters also have the drawback of not being sufficiently robust,and of not being able to be used for the infrared wavelengths.

Furthermore, a multicolor imager requires a number of photolithographicsteps proportional to the number of types of colored filters to beformed. These filters also have the drawback of being degraded when theyare exposed to temperatures in excess of 200° C.

On the other hand, interference filters (known as multilayer filters)also allow image sensors to be formed without being limited to thevisible wavelengths, and they can therefore be used for applicationsoutside of the visible range (UV or infrared). Their multilayerstructure however makes them expensive and more difficult to integrateowing to the large number of deposition steps needed for theirfabrication and to the total thickness of the stack, which can begreater than one micron.

Alternatives to colored filters using pigments and to multilayer filtershave therefore been provided.

Optical filters are known from the prior art comprising one or moremetal layers in which patterns (holes or bumps) are formed havingdimensions of the order of ten to a hundred nanometers. This type ofstructure is better known by the term plasmonic filter.

For this purpose, reference may be made to the document “Light in tinyholes” (C. Genet and T. W. Ebbesen, Nature 445, pages 39-46, 4 Jan.2007, the disclosure of which is incorporated by reference) whichdescribes the transmission of light by nanometer-sized holes.

Reference may also be made to the document “Structural Colors: FromPlasmonic to Carbon Nanostructures” (Ting Xu et al, Small Volume 7,Issue 22, pages 3128-3136, Nov. 18, 2011, the disclosure of which isincorporated by reference) which describes filters comprisingnanometer-sized metal patterns for filtering various colors, notablywith periodic patterns.

Finally, reference may be made to the document United States PatentApplication Publication No 2003/0103150 (the disclosure of which isincorporated by reference) which discloses metal filters of the typepresented hereinbefore which are formed by the same fabrication steps asthe tracks of the metallization levels of the integrated circuitscomprising these filters. The filters described in this documenttherefore have the same thickness as the metallization levels, and theycomprise the same metal material as the tracks of the metallizationlevels.

The metal filters obtained in the latter document may not be suitablefor filtering the light in a satisfactory manner. Indeed, the metaltracks of metallization levels have a height which can be of the orderof several hundreds of nanometers or of the order of a micrometer, andthe formation of patterns is limited by the constraints ofphotolithography and of filling with metal (notably when methods knownas “Damascene” are applied). Thus, the solution of the document US2003/0103150 does not allow the dimensions of the patterns that willform filters to be precisely chosen.

Generally speaking, the metal elements of metallization levels areformed between layers of silicon nitride (SIN) or of siliconcarbo-nitride (SICN). These layers of silicon nitride or of siliconcarbo-nitride therefore end up, in the solution presented in thedocument US 2003/0103150, on either side of the metal filters, a factwhich is detrimental to the optical properties of the metal filters.

SUMMARY

According to one embodiment and its implementation, the formation isprovided of metal optical filters that are more easily configurable,notably with regard to the dimensions, according to the desiredapplication, and which exhibit better optical properties.

According to one aspect, a method for fabricating an integrated imagingdevice with front face illumination is provided that comprises at leasta first photosensitive region in a substrate, the method comprising: theformation of at least a first lower dielectric region on top of thefront face of the substrate and of the first photosensitive region, thefirst lower dielectric region having an upper face, the formation of atleast a first metal optical filter comprising a metal pattern on top ofthe first photosensitive region of a pixel, the said filter being on thesaid upper face or extending into the first lower dielectric region fromthe said upper face, and the formation of a first upper dielectricregion on top of the first lower dielectric region and of the firstmetal optical filter so as to form with at least a part of the firstlower region a first dielectric region associated with one metallizationlevel of the integrated imaging device, the said upper face of the firstlower dielectric region being contained within the said first dielectricregion.

It is possible to form the first metal filter at any level chosen bythose skilled in the art depending on the application. The term ‘level’is here understood to mean a horizontal plane on top of the front faceof a substrate. By way of example, the first lower dielectric region cancomprise a portion of a region of pre-metal dielectric (or PMD), thefirst dielectric region then corresponding to a region of pre-metaldielectric, the first metal filter being buried in the region ofpre-metal dielectric. This configuration allows the metal optical filterto be placed as close as possible to the substrate, which has theadvantage of reducing the problems associated with the phenomenon wellknown to those skilled in the art by the expression “cross-talk”.

Alternatively, it is possible to form a first metal optical filter at ahigher level, for example in a region of inter-metal dielectric (orIMD). The first lower dielectric region then comprises the region ofpre-metal dielectric, and either a portion of a region of inter-metaldielectric, or one or more regions of inter-metal dielectric and aportion of a region of inter-metal dielectric, and the first dielectricregion associated with a metallization level comprises this portion ofregion of inter-metal dielectric and another portion of inter-metaldielectric (the first upper dielectric region).

It may be noted that the upper face of the first lower dielectric regionis always contained in a plane distinct from that from which ametallization level is formed associated with the first dielectricregion. It may also be noted that it is possible to form a metal opticalfilter by forming cavities within the first lower dielectric region andby filling these cavities with metal, or by forming a layer of metal onthe first lower dielectric region and by implementing a photolithographystep.

It is therefore possible to form metal optical filters having verydifferent heights from those of the metallization levels, which notablyallows metal patterns to be formed with minimum lateral dimensionsdifferent from the minimum lateral dimensions associated with the stepsfor fabrication of the metallization levels.

The dimensions of the metal optical filters may thus be more easilyadapted to the desired application.

It will be noted that it is not necessary to form layers of siliconnitride or of silicon carbo-nitride on either side of the metal opticalfilters, and an improvement in the optical properties of the filters istherefore obtained.

The method can furthermore comprise the formation of a second metaloptical filter on top of a second photosensitive region distinct fromthe first photosensitive region.

The first metal optical filter can be formed with a first metal, thesecond metal optical filter can be formed with a second metal, differentfrom the first metal, the upper face of the first lower dielectricregion associated with the first metal optical filter being contained ina plane distinct from the plane containing the upper face of a secondlower dielectric region associated with the second metal optical filter.The metals chosen for the two filters are independent of the metals usedfor the interconnect tracks.

Dimensions and a metal adapted to the filtering of one wavelength canthus be chosen for each optical filter, each filter being formed at alevel having a height different from the planes starting from whichmetallization levels are formed.

For adjacent photosensitive regions, it is possible to form the twofilters at a low level of the integrated imaging device in order tolimit the ‘cross-talk’ phenomena.

It may be noted that it is because the upper faces of the lowerdielectric regions of the two filters are not contained in the sameplane that it is possible to use different metals for these two filters.

The upper face of the first lower dielectric region and the upper faceof the second lower dielectric region can be contained within the samedielectric region associated with the same metallization level.

Filters having different characteristics can thus be formed within avery thin layer, preferably both close to the substrate.

The first metal can be of the copper and the second metal can bealuminum.

The inventors have observed that, for the filtering of certain colors, abetter transmission of the wavelength to be allowed through, and abetter rejection of the other wavelengths with a well chosen metal areobtained. In particular, copper is well adapted for allowing the colorred or the near-infrared range through, and aluminum for the color greenand the color blue.

As indicated hereinbefore, it is because the upper faces of the lowerdielectric regions are contained in separate plans that it is possibleto use different metals.

At least four metal optical filters may thus be formed in order to forma Bayer pattern, the metal optical filters of the green pixels and ofthe blue pixel comprising aluminum, and the optical filter of the redpixel comprising copper. A better imaging device is thus obtained withnotably a better reproduction of the colors by using a Bayer pattern.

Other types of matrix may be formed according to the method definedhereinbefore by integrating for example infrared or UV pixels.

According to another aspect, an integrated imaging device with frontface illumination is provided comprising at least a first photosensitiveregion in a substrate, the device comprising: a first lower dielectricregion on top of the front face of the substrate and of the firstphotosensitive region, the first lower dielectric region having an upperface, at least a first metal optical filter comprising a metal patternon top of the first photosensitive region, the said filter being on thesaid upper face or extending into the first lower dielectric region fromthe said upper face, and a first upper dielectric region on top of thefirst lower dielectric region and of the first metal optical filterforming with at least a part of the first lower dielectric region afirst dielectric region associated with one metallization level of theintegrated imaging device, the said upper face of the first lowerdielectric region being contained within the said first dielectricregion.

The device can comprise a second metal optical filter on top of a secondphotosensitive region disposed in the substrate and distinct from thefirst photosensitive region.

The first metal optical filter can comprise a first metal, the secondmetal optical filter can comprise a second metal different from thefirst metal, the upper face of the first lower dielectric regionassociated with the first metal optical filter being contained within aplan distinct of the plan containing the upper face of a second lowerdielectric region associated with the second metal optical filter.

The upper face of the first lower dielectric region and the upper faceof the second lower dielectric region can be contained in the samedielectric region associated with the same metallization level.

The first metal can be copper and the second metal can be aluminum.

The device can comprise at least four metal optical filters forming aBayer pattern, the metal optical filters of the green pixels and of theblue pixel comprising aluminum, and the red optical filter comprisingcopper. The device can furthermore comprise any other type of pixels ofother colors, infrared or UV, depending on the desired application.

BRIEF DESCRIPTION OF THE DRAWINGS

Other advantages and features of the invention will become apparent uponstudying the detailed description of some embodiments and theirimplementation, taken by way of non-limiting examples and illustrated bythe appended drawings in which:

FIGS. 1 to 7 illustrate schematically various steps of a method forfabricating an imaging device.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an imaging device IMG having a substrate SUB in whichphotosensitive regions ZP1, ZP2 and ZP3 have been formed. Eachphotosensitive region ZP1, ZP2 or ZP3 can correspond to a photosensitiveregion of a pixel and can for example be a photodiode, and the imagingdevice IMG can be of the CMOS type.

In order to bound the photosensitive regions ZP1, ZP2 and ZP3, deeptrench isolation (DTI) features TIP have been formed in the substrate.

Transistors TR, here of the MOS type, have also been formed on thesubstrate SUB.

In order to form a first metal optical filter (of the plasmonic type), afirst lower dielectric region RDI1 has been formed on top of the frontface of the substrate SUB and at least of the first photosensitiveregion ZP1. The first lower dielectric region has an upper face FS1starting from which the first metal optical filter will be formed.

The formation of the first lower dielectric region RDI1 notablycomprises the formation of insulating layers CIS, for example used forthe later formation of tracks of metallization levels. These insulatinglayers CIS can comprise silicon nitride or silicon carbo-nitride and areformed by deposition steps.

The insulating layers CIS do not extend over the photosensitive regionsZP1, ZP2 and ZP3 in order to obtain better optical properties.

It may be noted that the first lower dielectric region RDI1 herecorresponds to a portion of a region of pre-metal dielectric (PMD).

In order to form a copper filter, well adapted for filtering the colorred, cavities CV1 are formed bounding a periodic pattern in the firstlower dielectric region RDI1 on top of the photosensitive region ZP1(FIG. 2). The cavities CV1 have geometrical properties (lateral anddepth dimensions) which are linked to the wavelength to be filtered.Those skilled in the art will know how to choose these geometricalproperties according to this wavelength to be filtered. By way ofexample, the depth of the cavities CV1 (which will be the height of thefirst filter) can be in the range between 25 and 200 nanometers, whichis much smaller than the thickness of a metallization level (typically afew hundreds of nanometers to a few micrometers).

The cavities CV1 are subsequently filled with copper, as illustrated inFIG. 3. A first filter FIL1 is thus obtained in the filled cavities,which has a metal pattern corresponding to that bounded by the cavitiesCV1 described with reference to FIG. 2. This filling with copper can beimplemented by a physical vapor deposition (or PVD) process, and a firstresidual layer of copper RES1 can subsist after the filling on the upperface FS1 of the first lower dielectric region RDI1.

It may be noted that, in contrast to the filters according to the priorart, and notably to the filters described in the document US2003/0103150, it is not necessary to implement a method analogous tothat used to form a track of a metallization level which comprises theformation of cavities, the formation of barriers comprising tantalum andtantalum nitride, and filling with copper. Indeed, since the method offormation of the metal filters according to one aspect herein is notimplemented at the same time as the formation of the metallizationlevels, it is advantageously possible not to use barrier layers whichcan be detrimental to the optical properties of the filters.

No electromigration of the copper into the dielectric regions occurshere, since the metal optical filters are not biased. Furthermore, asmall amount of diffusion of the copper due to the thermal budget of thesteps likely to occur following the formation of the filter would haveno impact on the optical performance of this filter.

The first residual layer REST of copper can be removed (FIG. 4). Theupper face FS1 of the first lower dielectric region is thus opened upand a first filter FIL1 is left remaining on top of a firstphotosensitive region ZP1 which extends into the first lower dielectricregion from its upper face FS1.

As illustrated in FIG. 5, a first upper dielectric region RDS1 issubsequently formed on top of the first lower dielectric region RDI1 andof the first metal optical filter FIL1 so as to form, with at least apart of the first lower region, a first dielectric region ZD1 associatedwith one metallization level of the integrated imaging device formedlater on, the upper face FS1 of the first lower dielectric region beingcontained within the said first dielectric region.

An integrated imaging device IMG with front face illumination isaccordingly obtained comprising at least a first photosensitive regionZP1 in a substrate SUB, the device comprising: a first lower dielectricregion RDI1 on top of the front face of the substrate and of the firstphotosensitive region, the first lower dielectric region having an upperface FS1, at least a first metal optical filter FIL1 comprising a metalpattern on top of the first photosensitive region, the said filterextending into the first lower dielectric region, and a first upperdielectric region RDS1 on top of the first lower dielectric region andof the first metal optical filter forming, with at least a part of thefirst lower dielectric region, a first dielectric region ZD1 associatedwith one metallization level of the integrated imaging device, the saidupper face of the first lower dielectric region being contained withinthe said first dielectric region.

In FIG. 6, the imaging device IMG is shown after the formation of ametallization level comprising tracks LM1, here the first metallizationlevel of the imaging device IMG. The first metallization level isassociated with the first dielectric region ZD1 which corresponds to aregion of pre-metal dielectric.

It may be noted that the presence of the first filter FIL1 does notinterfere at all with the formation of the metal tracks LM1 which areformed on the upper face of the first dielectric region ZD1.

A portion of inter-metallic dielectric has also been formed in order toobtain a second lower dielectric region RDI2 having an upper face FS2contained in a separate plane of the upper face FS1 describedhereinbefore.

On the upper face FS2, a second metal filter FIL2 has been formed on topof the region ZP2, here made of aluminum and hence well adapted forfiltering the colors blue and green.

In FIG. 7, the integrated imaging device IMG is shown after a certainnumber of fabrication steps.

More precisely, the following have been formed: a second metallizationlevel associated with a second dielectric region ZD2 of the second metalfilter FIL2, a third metallization level and a connection to the outsideCON of the “pad” type and passivation layers PAS.

It may be noted that the second dielectric region ZD2 corresponds hereto the region of inter-metallic dielectric associated with the secondmetallization level.

Furthermore, in the prior art, the filters using pigments are disposedon top of the integrated imaging device, which leads to a poor operationassociated with the “cross-talk”. Here, the filters FIL1 and FIL2 aredisposed much lower down. Such is in particular the case for the filterFIL1 which is disposed within the dielectric region ZD1 whichcorresponds to the pre-metal dielectric, which is not possible with thesolutions of the prior art.

According to one aspect, the embodiments are not limited to the filtersdisposed within separate dielectric regions. It is possible to formfilters at different heights within the same dielectric regionassociated with one metallization level. It is also possible to form alarger number of different filters within the same integrated imagingdevice, for example in order to form Bayer patterns.

According to another aspect, metal optical filters, or plasmonicfilters, comprising metal patterns with dimensions the best adapted forthe wavelengths to be filtered, are more easily obtained.

Lastly, according to yet another aspect, better optical properties areobtained, since the metal filters can be formed directly within thedielectric regions without any additional layers.

What is claimed is:
 1. A method for fabricating an integrated imagingdevice with front face illumination, comprising: forming a first lowerdielectric region on top of a front face of a substrate including afirst photosensitive region of a pixel, the first lower dielectricregion having a first upper face, forming a first metal optical filtercomprising a metal pattern above the first photosensitive region, saidfirst metal filter positioned in trenches extending into the first lowerdielectric region from said first upper face, forming a first upperdielectric region on top of the first lower dielectric region and on topof an upper surface of the first metal optical filter so as to form,with at least a part of the first lower dielectric region, a firstdielectric region having a second upper face, and forming metal linesassociated with a lowest metallization level of the integrated imagingdevice positioned extending into the first upper dielectric region fromsaid second upper face, wherein said first upper face of the first lowerdielectric region and upper surface of the first metal optical filterare positioned closer to the front face of the substrate than saidsecond upper face of said first upper dielectric region.
 2. The methodaccording to claim 1, further comprising forming a second metal opticalfilter above a second photosensitive region distinct from the firstphotosensitive region.
 3. The method according to claim 2, wherein theupper face of the first lower dielectric region associated with thefirst metal optical filter is contained within a plane distinct from theplane containing the upper face of a second lower dielectric regionassociated with the second metal optical filter.
 4. A method forfabricating an integrated imaging device with front face illumination,comprising: forming a first lower dielectric region on top of a frontface of a substrate including a first photosensitive region of a pixel,the first lower dielectric region having an upper face, forming a firstmetal optical filter comprising a metal pattern above the firstphotosensitive region, said first metal filter positioned on said upperface or extending into the first lower dielectric region from said upperface, and forming a first upper dielectric region on top of the firstlower dielectric region and on top of the first metal optical filter soas to form, with at least a part of the first lower dielectric region, afirst dielectric region associated with one metallization level of theintegrated imaging device, wherein said upper face of the first lowerdielectric region is contained within the said first dielectric region;and forming a second metal optical filter above a second photosensitiveregion distinct from the first photosensitive region; wherein the firstmetal optical filter is formed with a first metal, the second metaloptical filter is formed with a second metal different from the firstmetal, the upper face of the first lower dielectric region associatedwith the first metal optical filter being contained within a planedistinct from the plane containing the upper face of a second lowerdielectric region associated with the second metal optical filter. 5.The method according to claim 4, wherein the upper face of the firstlower dielectric region and the upper face of the second lowerdielectric region are contained in the same dielectric region associatedwith the same metallization level.
 6. The method according to claim 4,wherein the first metal is copper and the second metal is aluminum. 7.The method according to claim 6, wherein at least four metal opticalfilters are formed in order to form a Bayer pattern, the metal opticalfilters of green and blue pixels comprising aluminum, and the metaloptical filter of the red pixel comprising copper.
 8. An integratedimaging device with front face illumination, comprising: a firstphotosensitive region in a substrate, a first lower dielectric region ontop of a front face of the substrate and of the first photosensitiveregion, the first lower dielectric region having a first upper face, atleast a first metal optical filter comprising a metal pattern above thefirst photosensitive region, said first metal optical filter positionedin trenches extending into the first lower dielectric region from saidfirst upper face, and a first upper dielectric region on top of thefirst lower dielectric region and on top of an upper surface of thefirst metal optical filter forming, with at least a part of the firstlower dielectric region, a first dielectric region having a second upperface, and metal lines associated with a lowest metallization level ofthe integrated imaging device positioned extending into the first upperdielectric region from said second upper face, wherein said first upperface of the first lower dielectric region and upper surface of the metaloptical filter are positioned closer to the front face of the substratethan said second upper face of said first upper dielectric region. 9.The device according to claim 8, further comprising a second metaloptical filter above a second photosensitive region disposed in thesubstrate and distinct from the first photosensitive region.
 10. Thedevice according to claim 9, wherein the upper face of the first lowerdielectric region associated with the first metal optical filter iscontained within a plane distinct from the plane containing the upperface of a second lower dielectric region associated with the secondmetal optical filter.
 11. The device according to claim 9, wherein theupper face of the first lower dielectric region and the upper face ofthe second lower dielectric region are contained within the samedielectric region associated with the same metallization level.
 12. Anintegrated imaging device with front face illumination, comprising: atleast a first photosensitive region in a substrate, a first lowerdielectric region on top of a front face of the substrate and of thefirst photosensitive region, the first lower dielectric region having anupper face, at least a first metal optical filter comprising a metalpattern above the first photosensitive region, said first metal opticalfilter positioned on said upper face or extending into the first lowerdielectric region from said upper face, and a first upper dielectricregion on top of the first lower dielectric region and on top of thefirst metal optical filter forming, with at least a part of the firstlower dielectric region, a first dielectric region associated with onemetallization level of the integrated imaging device, said upper face ofthe first lower dielectric region being contained within said firstdielectric region; a second metal optical filter above a secondphotosensitive region disposed in the substrate and distinct from thefirst photosensitive region; wherein the first metal optical filtercomprises a first metal, the second metal optical filter comprises asecond metal different from the first metal, the upper face of the firstlower dielectric region associated with the first metal optical filterbeing contained within a plane distinct from the plane containing theupper face of a second lower dielectric region associated with thesecond metal optical filter.
 13. The device according to claim 12,wherein the first metal is copper and the second metal is aluminum. 14.The device according to claim 13, further comprising at least four metaloptical filters forming a Bayer pattern, the metal optical filters ofthe green and blue pixels comprising aluminum, and the metal opticalfilter of the red pixel comprising copper.
 15. A device, comprising: asemiconductor substrate; a first photosensitive region formed in thesemiconductor substrate; a first dielectric layer over a top surface ofthe semiconductor substrate, the first dielectric layer having a firstupper surface; a plurality of trenches in the first upper surface of thefirst dielectric layer positioned above the first photosensitive region;a first metal material filling the plurality of trenches to form a firstmetal optical filter having an upper surface co-planar with said firstupper surface of the first dielectric layer; a second dielectric layeron the first upper surface, said second dielectric layer having a secondupper surface positioned above the first upper surface and the firstmetal optical filter; and a metal line of a lowest metallization layerpositioned extending into the second dielectric layer from said secondupper face and further extending into the first upper surface of thefirst dielectric layer.
 16. The device of claim 15, wherein the firstmetallization layer has a second upper surface, further comprising: asecond photosensitive region formed in the semiconductor substrate; anda plurality of metal structures formed of a second metal material on thesecond upper surface positioned above the second photosensitive regionto form a second metal optical filter.
 17. A device, comprising: asemiconductor substrate; a first photosensitive region formed in thesemiconductor substrate; a second photosensitive region formed in thesemiconductor substrate; a pre-metal dielectric layer over a top surfaceof the semiconductor substrate, the pre-metal dielectric layer having afirst upper surface; a plurality of trenches in the first upper surfaceof the pre-metal dielectric layer positioned above the firstphotosensitive region; a first metal material filling the plurality oftrenches to form a first metal optical filter; a first metallizationlayer over the first upper surface, wherein the first metallizationlayer has a second upper surface; and a plurality of metal structuresformed of a second metal material on the second upper surface positionedabove the second photosensitive region to form a second metal opticalfilter.
 18. The device of claim 17, wherein the first metal material iscopper and the second metal material is aluminum.
 19. The device ofclaim 17, wherein the first metal material is selected from the groupconsisting of aluminum and copper.